Effect of Au on the crystallization of germanium thin films by electron-beam evaporation


APPLIED SURFACE SCIENCE, vol.318, pp.116-120, 2014 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 318
  • Publication Date: 2014
  • Doi Number: 10.1016/j.apsusc.2014.01.145
  • Title of Journal : APPLIED SURFACE SCIENCE
  • Page Numbers: pp.116-120
  • Keywords: Poly-Ge, Metal induced crystallization, Axial growth, GE NANOWIRES, GROWTH, DEVICES, SI


Metal induced crystallization is a widely used method to form crystalline/polycrystalline structures at low temperatures. In this work, Au was applied to enhance the crystallization of amorphous Ge films. Ge films with thicknesses of similar to 1.5 mu m were fabricated by electron beam evaporation on c-Si substrate with and without very thin Au layer. Crystallization properties of Ge films were analyzed for different growth and post annealing temperatures varied between 270 degrees C and 730 degrees C. The structures of polycrystalline Ge films were investigated by employing X-ray diffraction (XRD), Raman spectra and scanning electron microscopy (SEM).