Effect of Au on the crystallization of germanium thin films by electron-beam evaporation
APPLIED SURFACE SCIENCE, vol.318, pp.116-120, 2014 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 318
- Publication Date: 2014
- Doi Number: 10.1016/j.apsusc.2014.01.145
- Journal Name: APPLIED SURFACE SCIENCE
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.116-120
- Keywords: Poly-Ge, Metal induced crystallization, Axial growth, GE NANOWIRES, GROWTH, DEVICES, SI
- Middle East Technical University Affiliated: Yes
Abstract
Metal induced crystallization is a widely used method to form crystalline/polycrystalline structures at low temperatures. In this work, Au was applied to enhance the crystallization of amorphous Ge films. Ge films with thicknesses of similar to 1.5 mu m were fabricated by electron beam evaporation on c-Si substrate with and without very thin Au layer. Crystallization properties of Ge films were analyzed for different growth and post annealing temperatures varied between 270 degrees C and 730 degrees C. The structures of polycrystalline Ge films were investigated by employing X-ray diffraction (XRD), Raman spectra and scanning electron microscopy (SEM).