Low Actuation Wideband RF MEMS Shunt Capacitive Switch


Mafinejad Y., Kouzani A. Z. , Mafinezhad K., Kaynak A.

International Workshop on Information and Electronics Engineering (IWIEE) / International Conference on Information, Computing and Telecommunications (ICICT), Harbin, China, 10 - 11 March 2012, vol.29, pp.1292-1297 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 29
  • Doi Number: 10.1016/j.proeng.2012.01.129
  • City: Harbin
  • Country: China
  • Page Numbers: pp.1292-1297
  • Keywords: High impedance short transmission line, low actuation voltage, wideband, RF MEMS, shunt switch

Abstract

A wide bandwidth low actuation voltage RF MEMS capacitive shunt switch is designed and simulated. The proposed switch is designed for a low actuation voltage of 12 volts applicable to wireless systems. High frequency characteristics of the RF MEMS switches can be specified by coupling capacitors in up-state position C-u. This capacitor is in trade-off with actuation voltage. In the proposed switch, the capacitor is compensated by incorporating two short high impedance transmission lines as a T matching circuit. Simulating the switch demonstrates great improvement in RF characteristics of the switch particularly in reflection coefficient in up-state position. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of Harbin University of Science and Technology