Photocurrent analysis of AgIn5S8 crystal


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Bucurgat M., Ozdemir S., Firat T.

BULLETIN OF MATERIALS SCIENCE, cilt.39, ss.1521-1529, 2016 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 39 Konu: 6
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1007/s12034-016-1302-z
  • Dergi Adı: BULLETIN OF MATERIALS SCIENCE
  • Sayfa Sayıları: ss.1521-1529

Özet

The photocurrent (PC) spectrum of AgIn5S8 crystal consists of a single peak, which provides to determine the bandgap energy by applying the Moss rule. The temperature dependence of the bandgap energy was also calculated. The PC dramatically increased by pre-illumination with light having wavelength corresponding to the bandgap of AgIn5S8. The temperature-dependent PC of the sample was measured at different temperatures from 80 to 300 K and the PC spectrum consisted a single broad peak. Thermal quenching of the PC was observed to start at similar to 105 K and the PC completely quenched at similar to 180 K. The quenching mechanism was discussed in terms of the two-centre model. The height of the PC peak rised linearly with applied voltage up to 5.0 V under constant intensity of light. Similarly, the dark current-voltage characteristics consisted of a single region dominating an ohmic behaviour, and no space charge limited region was apparent at various temperatures up to 20 V.