Photocurrent analysis of AgIn5S8 crystal


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Bucurgat M., Ozdemir S., Firat T.

BULLETIN OF MATERIALS SCIENCE, vol.39, no.6, pp.1521-1529, 2016 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 39 Issue: 6
  • Publication Date: 2016
  • Doi Number: 10.1007/s12034-016-1302-z
  • Title of Journal : BULLETIN OF MATERIALS SCIENCE
  • Page Numbers: pp.1521-1529

Abstract

The photocurrent (PC) spectrum of AgIn5S8 crystal consists of a single peak, which provides to determine the bandgap energy by applying the Moss rule. The temperature dependence of the bandgap energy was also calculated. The PC dramatically increased by pre-illumination with light having wavelength corresponding to the bandgap of AgIn5S8. The temperature-dependent PC of the sample was measured at different temperatures from 80 to 300 K and the PC spectrum consisted a single broad peak. Thermal quenching of the PC was observed to start at similar to 105 K and the PC completely quenched at similar to 180 K. The quenching mechanism was discussed in terms of the two-centre model. The height of the PC peak rised linearly with applied voltage up to 5.0 V under constant intensity of light. Similarly, the dark current-voltage characteristics consisted of a single region dominating an ohmic behaviour, and no space charge limited region was apparent at various temperatures up to 20 V.