Monte-Carlo simulation of MBE growth of GaAs analysis of RHEED

Van Hall P., Kokten H., Leys M., Bosch M.

SURFACE REVIEW AND LETTERS, cilt.4, ss.869-872, 1997 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 4 Konu: 5
  • Basım Tarihi: 1997
  • Doi Numarası: 10.1142/s0218625x97000948
  • Sayfa Sayıları: ss.869-872


We have performed Monte-Carlo simulations of the growth of GaAs by MBE. We included in our calculations the anisotropy of the migration, the formation of As-dimers and a partial desorption of the As. As an observable we calculated the RHEED signal of the specularly reflected electrons. The results have been compared with experimental data comprising both the damping of the oscillations and the recovery following a growth interrupt. The agreement between experiment and calculations is rather good. Moreover we could identify the mechanisms underlying the fast and the slow component of the recovery.