Microcavity enhanced amorphous silicon photoluminescence


Serpenguzel A., Aydinli A., BEK A.

Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2), San-Francisco, Costa Rica, 10 - 13 November 1997, vol.1, pp.243-244 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 1
  • City: San-Francisco
  • Country: Costa Rica
  • Page Numbers: pp.243-244

Abstract

A microcavity enhancement of room temperature photoluminescence (PL) of a hydrogenated amorphous silicon (a-Si:h) was performed. A quantum confinement model was developed to describe the occurrence of the PL in the bulk a-Si:H. According to the model, small a-Si clusters are in a matrix of a-Si:H. The regions with Si-H, having larger energy gaps due to strong Si-H bonds, isolate these clusters, and form barrier regions around them. The PL originates from these a-Si clusters.