GaSe thin films were deposited by thermal evaporation technique with Cd doping. X-ray diffraction analysis showed that Cd-doped films have polycrystalline structure with the preferred orientation along ( 008) direction. Temperature dependent electrical conductivity measurements were carried out in the temperature range of 100 - 400 K along perpendicular and parallel directions to the growth direction for the films exhibiting p-type conduction determined by hot probe technique. The room temperature conductivity values of the films were found to be as 1.5 x 10(-8) and 4.9 x 10(-12) ( Omega cm)(-1) due to the measurements along both perpendicular and parallel directions, respectively. The difference in the conductivity values is the indication of electrical anisotropy in the samples. Carrier conduction in the films was provided by the thermionic emission in the high temperature region (310 - 400 K) with almost the same activation energies in both directions. Space charge limited current analysis at different temperatures reveals the existence of two discrete sets of trap levels for both perpendicular and parallel directions. Calculated trap levels and trap concentrations are 99 meV, 3.5 x 10(12) cm(-3) and 418 meV, 2.2 x 10(5) cm(-3) for perpendicular direction, 58 meV, 2.1 x 10(18) cm(-3) and 486 meV, 1.4 x 10(12) cm(-3) for parallel direction. The differences in the values of the trap levels and concentrations for both directions confirm the existence of electrical anisotropy in Cd-doped GaSe thin films, because of the structural anisotropy between and inside the crystallites.