Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition


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Craven M., Wu F., Chakraborty A., Imer B. , Mishra U., DenBaars S., ...Daha Fazla

APPLIED PHYSICS LETTERS, cilt.84, ss.1281-1283, 2004 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 84 Konu: 8
  • Basım Tarihi: 2004
  • Doi Numarası: 10.1063/1.1650545
  • Dergi Adı: APPLIED PHYSICS LETTERS
  • Sayfa Sayıları: ss.1281-1283

Özet

This letter describes the relationship between the morphological evolution of heteroepitaxial a-plane GaN films and the formation of the extended defect structure. The initial a-plane GaN growth on a-plane SiC substrates (via a high temperature AlN buffer layer) follows a Volmer-Weber growth mode. Consequently, the coalescence of three-dimensional (3D) islands generates threading dislocations which dominate the nonpolar GaN film's microstructure (3x10(10) cm(-2)). Exposed nitrogen-face surfaces, identified using x-ray diffraction measurements and convergent beam electron diffraction analysis, are present throughout the 3D growth and are the likely source of basal plane faulting (7x10(5) cm(-1)) within the film. Atomic force microscopy and scanning electron microscopy were used to image the morphological transition, which was correlated to changes in the a-GaN crystal tilt mosaic measured by x-ray rocking curves. (C) 2004 American Institute of Physics.