Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories

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Akca I. B., DANA A., AYDINLI A., TURAN R.

APPLIED PHYSICS LETTERS, vol.92, no.5, 2008 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 92 Issue: 5
  • Publication Date: 2008
  • Doi Number: 10.1063/1.2835455
  • Journal Name: APPLIED PHYSICS LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Middle East Technical University Affiliated: Yes

Abstract

Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents are observed to differ significantly and depend on annealing conditions chosen for the formation of nanocrystals. At low annealing temperatures, holes are seen to charge slower but to escape faster than electrons. They discharge slower than electrons when annealing temperatures are raised. The results suggest that discharge currents are dominated by the interface layer acting as a quantum well for holes and by direct tunneling for elec-trons. (c) 2008 American Institute of Physics.