Integrated piezoresistive sensors for atomic force-guided scanning Hall probe microscopy

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BROOK A. J., BENDİNG S., PINTO J., Oral A., RİTCHİE D., BEERE H., ...More

APPLIED PHYSICS LETTERS, vol.82, no.20, pp.3538-3540, 2003 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 82 Issue: 20
  • Publication Date: 2003
  • Doi Number: 10.1063/1.1576914
  • Journal Name: APPLIED PHYSICS LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.3538-3540
  • Middle East Technical University Affiliated: No

Abstract

We report the development of an advanced sensor for atomic force-guided scanning Hall probe microscopy whereby both a high mobility heterostructure Hall effect magnetic sensor and an n-Al0.4Ga0.6As piezoresistive displacement sensor have been integrated in a single III-V semiconductor cantilever. This allows simple operation in high-vacuum/variable-temperature environments and enables very high magnetic and topographic resolution to be achieved simultaneously. Scans of magnetic induction and topography of a number of samples are presented to illustrate the sensor performance at 300 and 77 K. (C) 2003 American Institute of Physics.