Integrated piezoresistive sensors for atomic force-guided scanning Hall probe microscopy

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BROOK A. J., BENDİNG S., PINTO J., Oral A., RİTCHİE D., BEERE H., ...Daha Fazla

APPLIED PHYSICS LETTERS, cilt.82, sa.20, ss.3538-3540, 2003 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 82 Sayı: 20
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1063/1.1576914
  • Dergi Adı: APPLIED PHYSICS LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.3538-3540
  • Orta Doğu Teknik Üniversitesi Adresli: Hayır

Özet

We report the development of an advanced sensor for atomic force-guided scanning Hall probe microscopy whereby both a high mobility heterostructure Hall effect magnetic sensor and an n-Al0.4Ga0.6As piezoresistive displacement sensor have been integrated in a single III-V semiconductor cantilever. This allows simple operation in high-vacuum/variable-temperature environments and enables very high magnetic and topographic resolution to be achieved simultaneously. Scans of magnetic induction and topography of a number of samples are presented to illustrate the sensor performance at 300 and 77 K. (C) 2003 American Institute of Physics.