Compact Stacked Planar Inverted-F Antenna for Passive Deep Brain Stimulation Implants

Hosain M. K., Kouzani A. Z., Tye S., Mortazavi D., Kaynak A.

34th Annual International Conference of the IEEE Engineering-in-Medicine-and-Biology-Society (EMBS), California, United States Of America, 28 August - 01 September 2012, pp.851-854 identifier identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Doi Number: 10.1109/embc.2012.6346065
  • City: California
  • Country: United States Of America
  • Page Numbers: pp.851-854
  • Middle East Technical University Affiliated: No


A compact meandered three-layer stacked circular planar inverted-F antenna is designed and simulated at the UHF band (902.75 - 927.25 MHz) for passive deep brain stimulation implants. The UHF band is used because it offers small antenna size, and high data rate. The top and middle radiating layers are meandered, and low cost substrate and superstrate materials are used to limit the radius and height of the antenna to 5 mm and 1.64 mm, respectively. A dielectric substrate of FR-4 of epsilon(r) = 4.7 and delta = 0.018, and a biocompatible superstrate of silicone of epsilon(r) = 3.7 and delta = 0.003 with thickness of 0.2 mm are used in the design. The resonance frequency of the proposed antenna is 918 MHz with a bandwidth of 24 MHz at return loss of -10 dB in free space. The antenna parameter such as 3D gain pattern of the designed antenna within a skin-tissue model is evaluated by using the finite element method. The compactness, wide bandwidth, round shape, and stable characteristics in skin make this antenna suitable for DBS. The feasibility of the wireless power transmission to the implant in the human head is also examined.