Growth, electrical and structural characterization of beta-GaSe thin films

Parlak M., QASRAWİ A., Ercelebi C.

JOURNAL OF MATERIALS SCIENCE, cilt.38, sa.7, ss.1507-1511, 2003 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 38 Sayı: 7
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1023/a:1022924615383
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1507-1511
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

GaSe thin films were deposited onto the glass substrates kept at 200degrees and 300degreesC by the thermal evaporation of GaSe crystals under the pressure of 10(-5) Torr. X-ray analysis of the films revealed that films grown at 200. C are amorphous in nature while the films grown at 300degreesC are polycrystalline beta-GaSe. The temperature dependent electrical conductivity measurements in the region of 320-100 K for the films grown at 300degreesC showed that the transport mechanisms are the thermionic emission of charged carriers and the variable range hopping above and below 180 K, respectively. Space charge limited current (SCLC) studies have also been performed on these films through the current-voltage measurements at different temperatures and a dominant hole trap at 0.233 eV from the top of the valance band with a trap density of similar to1.6 x 10(11) cm(-3) is identified. (C) 2003 Kluwer Academic Publishers.