N-structure based on InAs/AlSb/GaSb superlattice photodetectors


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HOŞTUT M., ALYÖRÜK M. M. , TANSEL T., KILIÇ A. Y. , TURAN R., AYDINLI A., ...More

SUPERLATTICES AND MICROSTRUCTURES, vol.79, pp.116-122, 2015 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 79
  • Publication Date: 2015
  • Doi Number: 10.1016/j.spmi.2014.12.022
  • Journal Name: SUPERLATTICES AND MICROSTRUCTURES
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.116-122
  • Keywords: Infrared detector, III-V semiconductors, Type-II superlattice, InAs/AlSb/GaSb, Photodetectors, MWIR, ELECTRON-GAS
  • Middle East Technical University Affiliated: Yes

Abstract

We have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies was investigated using first principles calculations taking into account InSb and AlAs as possible interface transition alloys between AlSb/InAs layers and individual layer thicknesses of GaSb and InAs. T2SL N-structure was optimized to operate as a MWIR detector based on these theoretical approaches tailoring the band gap and HH-LH splitting energies with InSb transition layers between InAs/AlSb interfaces. Experimental results show that AlSb layers in the structure act as carrier blocking barriers reducing the dark current. Dark current density and RoA product at 125 K were obtained as 1.8 x 10(-6) A cm(-2) and 800 Omega cm(2) at zero bias, respectively. The specific detectivity was measured as 3 x 10(12) Jones with cut-off wavelengths of 4.3 mu m at 79 K reaching to 2 x 10(9) Jones and 4.5 mu m at 255 K. (C) 2014 Elsevier Ltd. All rights reserved.