Mapping electrically active dopant profiles by field-emission scanning electron microscopy

Turan R., Perovic D., Houghton D.

APPLIED PHYSICS LETTERS, cilt.69, sa.11, ss.1593-1595, 1996 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 69 Sayı: 11
  • Basım Tarihi: 1996
  • Doi Numarası: 10.1063/1.117041
  • Dergi Adı: APPLIED PHYSICS LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1593-1595
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Secondary electron (SE) image contrast from p-type silicon has been studied using field-emission scanning electron microscopy (FE-SEM). Cross-sectional FE-SEM images of boron-doped silicon heterostructures have been compared with atomic concentration and free carrier profiles measured by secondary-ion mass spectroscopy and electrochemical capacitance-voltage profiling, respectively. FE-SEM image contrast due to dopants has been shown to be electronic in origin. Since electrically active dopant species contribute solely to SE image contrast, FE-SEM can be effectively used to map electrically active dopant profiles in two dimensions with a sensitivity as low as 10(16) cm(-3). (C) 1996 American Institute of Physics.