Mechanism Studies on CVD of Boron Carbide from a Gas Mixture of BCl3, CH4, and H-2 in a Dual Impinging-jet Reactor

Karaman M., SEZGİ N. A. , DOĞU T. , Ozbelge H. O.

AICHE JOURNAL, vol.55, no.3, pp.701-709, 2009 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 55 Issue: 3
  • Publication Date: 2009
  • Doi Number: 10.1002/aic.11717
  • Title of Journal : AICHE JOURNAL
  • Page Numbers: pp.701-709
  • Keywords: adsorption/gas, deposition methods (CVD, MOCVD), reaction kinetics, CHEMICAL-VAPOR-DEPOSITION, COATINGS, B4C


Nearly pure boron carbide free from impurities was produced on a tungsten substrate in a dual impinging-jet chemical vapor deposition reactor from a BCl3, CH4, and H-2 mixture. The Fourier Tran form Infrared (FTIR) analysis proved the formation Of reaction intermediate BHCl2, which is proposed to occur mainly in the gaseous boundary layer next to the substrate surface. Among a large number of reaction mechanisms proposed only the ones considering the molecular adsorption of boron carbide on the substrate surface gave reasonable fits. In the proposed mechanism dichloroborane is formed in the gas phase only as a by-product. Boron carbide, on the other hand, is formed through a series of surface reactions involving adsorbed boron trichloride, adsorbed methane and gas phase hydrogen. The simultaneous fit of the experimental rate data to the model expressions gave correlation coefficient values of 0.977 and 0.948, in predicting the B4C and BHCl2 formation rates, respectively. (c) 2009 American Institute of Chemical Engineers AIChE J, 55: 701-709, 2009