SOLAR ENERGY MATERIALS AND SOLAR CELLS, cilt.256, ss.1-6, 2023 (SCI-Expanded)
SiNx and SiOxNy layers deposited by the PECVD method are commonly used in silicon solar cells for their
excellent thin film properties. In this study, we perform an experimental analysis of the optical, chemical and
electrical properties of these films prepared under different process conditions. The C–V measurements for the
interface analysis reveal that SiOxNy layers for any refractive index have lower interface state density and fixed
charge density than SiNx layers. Additionally, our calculations on the FTIR spectra indicate that SiNx, when
compared with SiOxNy, has a significantly higher hydrogen amount which is important in reducing the interface
traps. Furthermore, we explain the passivation results obtained from PCD measurement for single SiNx, single
SiOxNy and their stack layers on p-type and n-type Si wafers by C–V and FTIR measurements. Our results suggest
that depositing a very thin SiOxNy having low Dit beneath SiNx having high Qf and H amount provides superior
passivation on p and n-type Si wafers, which is improved further by a subsequent fast-firing process.