Zinc oxide nanowire networks for macroelectronic devices


Unalan H. E. , Zhang Y., Hiralal P., Dalal S., Chu D., Eda G., ...More

APPLIED PHYSICS LETTERS, vol.94, no.16, 2009 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 94 Issue: 16
  • Publication Date: 2009
  • Doi Number: 10.1063/1.3120561
  • Journal Name: APPLIED PHYSICS LETTERS
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Keywords: II-VI semiconductors, lithography, logic devices, nanowires, percolation, semiconductor quantum wires, thin film transistors, zinc compounds, FIELD-EFFECT TRANSISTORS, THIN-FILM TRANSISTORS, ZNO NANOWIRE, FLEXIBLE ELECTRONICS, SOLAR-CELLS, TRANSPARENT, ARRAYS, GROWTH

Abstract

Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.