Mechanisms of photocurrent generation in SiGe/Si HIP infrared photodetectors

Aslan B., Turan R., Liu H., Baribeau J.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.19, no.3, pp.399-403, 2004 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 19 Issue: 3
  • Publication Date: 2004
  • Doi Number: 10.1088/0268-1242/19/3/018
  • Journal Name: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.399-403
  • Middle East Technical University Affiliated: Yes

Abstract

We study the mechanisms of photocurrent generation in the SiGe/Si heterojunction internal photoemission (HIP) infrared photodetectors and present a qualitative model. It has been shown that the performance of our devices depends significantly on the applied bias and the operating temperature. The device presented here allows us to tune the cut-off wavelength between 28.3 mum and 17.8 mum by changing the potential difference across the device.