Low dark current designs for mesa type SWIR photodetectors


ŞAHİN A. , KOCAMAN S.

Conference on Infrared Technology and Applications XLVI, ELECTR NETWORK, 27 April - 08 May 2020, vol.11407 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 11407
  • Doi Number: 10.1117/12.2558589
  • Country: ELECTR NETWORK

Abstract

Extremely low level dark current values are required for SWIR detection during the night when there is no active illumination due to weak sources and the lack of self emission. InGaAs detectors with planar pixel structures are the popular choice in SWIR range, even though there are some shortcomings such as the incompatability with dual color applications and the not tunable cut-off wavelength. To address these points, two nBn structured photodetector designs covering SWIR and extended SWIR in InGaAs material system will be discussed here.