Electronic band structure of stepped Si(100) surfaces

Salman S., Katircioglu S., Erkoc S.

SURFACE REVIEW AND LETTERS, cilt.8, ss.61-66, 2001 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 8
  • Basım Tarihi: 2001
  • Doi Numarası: 10.1016/s0218-625x(01)00083-5
  • Dergi Adı: SURFACE REVIEW AND LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.61-66
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

We have investigated the electronic band structure of five different stepped Si(100) surfaces by the empirical tight binding (ETB) method. It has been found that the interaction states have approximately the same energy values for the stepped surfaces with a similar dimer bond nature on the terraces. The single layer stepped models show different density-of-states features than the double layer stepped models.