Electronic band structure of stepped Si(100) surfaces


Salman S., Katircioglu S., Erkoc S.

SURFACE REVIEW AND LETTERS, vol.8, pp.61-66, 2001 (Peer-Reviewed Journal) identifier identifier

  • Publication Type: Article / Article
  • Volume: 8
  • Publication Date: 2001
  • Doi Number: 10.1016/s0218-625x(01)00083-5
  • Journal Name: SURFACE REVIEW AND LETTERS
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.61-66

Abstract

We have investigated the electronic band structure of five different stepped Si(100) surfaces by the empirical tight binding (ETB) method. It has been found that the interaction states have approximately the same energy values for the stepped surfaces with a similar dimer bond nature on the terraces. The single layer stepped models show different density-of-states features than the double layer stepped models.