We report on the fabrication and characterization of all nanowire (NW) network photodetectors. For this purpose, germanium (Ge) NW networks are used as active semiconducting elements, whereas single walled carbon nanotube (SWNT) and silver (Ag) NW networks are used as the contacts. Following their synthesis, all NW networks are deposited through simple solution based methods. Photoresponse characteristics and transparency of the photodetectors for different Ge NW densities are measured. The fabricated devices show a large response with short relaxation times (< 10 ms), are flexible and transparent within the visible spectrum.