In this work, Cu0.5Ag0.5InSe2 (CAIS) thin film samples were prepared by thermal evaporation of Cu, Ag, InSe and Se evaporants sequentially on glass substrates. Following the deposition, annealing processes were applied at different temperatures. The as-grown and annealed CAIS samples were nearly stoichiometric in the detection limit of the compositional measurement. The x-ray diffraction (XRD) measurements revealed that they were in polycrystalline structure with a preferred orientation along the (112) direction. Moreoever, the crystallinity of the films improved with increasing annealing temperature. According to the results of Raman measurements, the highest Raman intensity was found in the A(1) mode which is directly proportional to the crystallinity of the samples. The surface properties of the thin films were analyzed by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM). These results showed that there was a Se agglomeration on the deposited film surfaces and with annealing processes segregation effects were observed on the surface of the annealed samples. X-ray photoelectron spectroscopy (XPS) measurements were carried out to get information about surface and near-surface properties of the films. The results from the surface and depth surface analyses of the films were found to be in agreement with the energy dispersive spectroscopy (EDS) analysis.