Determination of ion dose and profiles in Ge-74 and Sn-120 implanted silicon layers by PIXE, NAA, RBS and SIMS

Belin, B; Bode, P; Turan, RAŞİT; Van Meerten, TG

doi:10.1023/b:jrnc.0000034889.71332.26

Determination of ion dose and profiles in Ge-74 and Sn-120 implanted silicon layers by PIXE, NAA, RBS and SIMS

Atıf İçin Kopyala

Belin B., Bode P., Turan R., Van Meerten T.

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY, cilt.261, sa.2, ss.479-483, 2004 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 261 Sayı: 2
Basım Tarihi: 2004
Doi Numarası: 10.1023/b:jrnc.0000034889.71332.26
Dergi Adı: JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.479-483
Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Implanted Ge-74 and Sn-121 concentrations in silicon (Si) layers were investigated by particle induced X-ray emission (PIXE), instrumental neutron activation analysis (INAA), Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS). Slight differences were observed in the results obtained. It was shown that PIXE and INAA are as powerful as the traditional RBS and SIMS spectroscopy for the investigation of thin layered Si.