Determination of ion dose and profiles in Ge-74 and Sn-120 implanted silicon layers by PIXE, NAA, RBS and SIMS


Belin B., Bode P., Turan R. , Van Meerten T.

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY, vol.261, no.2, pp.479-483, 2004 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 261 Issue: 2
  • Publication Date: 2004
  • Doi Number: 10.1023/b:jrnc.0000034889.71332.26
  • Title of Journal : JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY
  • Page Numbers: pp.479-483

Abstract

Implanted Ge-74 and Sn-121 concentrations in silicon (Si) layers were investigated by particle induced X-ray emission (PIXE), instrumental neutron activation analysis (INAA), Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS). Slight differences were observed in the results obtained. It was shown that PIXE and INAA are as powerful as the traditional RBS and SIMS spectroscopy for the investigation of thin layered Si.