A Dual-Band HgCdTe nBn Infrared Detector Design


Conference on Infrared Sensors, Devices, and Applications IX as part of SPIE Optics + Photonics Conference, California, United States Of America, 14 - 15 August 2019, vol.11129 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 11129
  • Doi Number: 10.1117/12.2529240
  • City: California
  • Country: United States Of America
  • Keywords: Infrared detectors, HgCdTe, dual-band, unipolar barrier, nBn, compositional grading, delta-doping, NUMERICAL-SIMULATION


Low dark current and/or high operating temperature are the main motivations behind the nBn detector structures where removing the valence band discontinuity is usually an important design challenge. With the utilization of the bias polarity, these structures can also be easily designed as dual-band detectors and in this study, a dual-band (MWIR / LWIR) HgCdTe nBn detector configuration has been numerically examined. Valence band barrier suppression has been obtained with the delta-doped and compositional graded layers similar to the recent single band studies.