Chemical vapor deposition (CVD) of boron by hydrogen reduction of BCl, on a hot tungsten substrate was investigated in a parallel flow reactor. Effect of substrate temperature (1100-1250 degreesC) on the relative rates of formation of BHCl2 and boron was observed by the on-line analysis of the reactor effluent stream composition using an FT-IR spectrophotometer. It was concluded that BHCl2 was majorly formed in the gas phase within the thermal boundary layer adjacent to the substrate with possible contribution of surface reactions at higher temperatures. Comparison of results obtained in the impinging jet and parallel flow reactors indicated the significance of diffusion resistance in the parallel flow system. Tubular flow reactor experiments indicated that BHCl2 formation reaction started at temperatures as low as 350 degreesC and reached equilibrium in less than a second at temperatures over 420 degreesC. (C) 2001 Elsevier Science B.V. All rights reserved.