NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, vol.238, pp.272-275, 2005 (Journal Indexed in SCI)
Article / Article
Title of Journal :
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of Ge quantum dots in Ge-implanted SiO2. Ge ion doses were up to 10(17)/cm(2), and subsequent annealing temperatures up to T-a = 1000 degrees C. Results suggest that ordered and correlated Ge QDs can be achieved by high-dose implantation followed by medium-T annealing. (c) 2005 Elsevier B.V. All rights reserved.