The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2

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Desnica U., Dubcek P., Salamon K., Desnica-Frankovic I., Buljan M., Bernstoff S., ...More

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, vol.238, pp.272-275, 2005 (SCI-Expanded)

• Publication Type: Article / Article
• Volume: 238
• Publication Date: 2005
• Doi Number: 10.1016/j.nimb.2005.06.062
• Journal Name: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
• Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Page Numbers: pp.272-275
• Middle East Technical University Affiliated: Yes

Abstract

Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of Ge quantum dots in Ge-implanted SiO2. Ge ion doses were up to 10(17)/cm(2), and subsequent annealing temperatures up to T-a = 1000 degrees C. Results suggest that ordered and correlated Ge QDs can be achieved by high-dose implantation followed by medium-T annealing. (c) 2005 Elsevier B.V. All rights reserved.