The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2

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Atıf İçin Kopyala

Desnica U., Dubcek P., Salamon K., Desnica-Frankovic I., Buljan M., Bernstoff S., ...Daha Fazla

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, cilt.238, ss.272-275, 2005 (SCI-Expanded)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 238
• Basım Tarihi: 2005
• Doi Numarası: 10.1016/j.nimb.2005.06.062
• Dergi Adı: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Sayfa Sayıları: ss.272-275
• Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of Ge quantum dots in Ge-implanted SiO2. Ge ion doses were up to 10(17)/cm(2), and subsequent annealing temperatures up to T-a = 1000 degrees C. Results suggest that ordered and correlated Ge QDs can be achieved by high-dose implantation followed by medium-T annealing. (c) 2005 Elsevier B.V. All rights reserved.