The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2


Desnica U., Dubcek P., Salamon K., Desnica-Frankovic I., Buljan M., Bernstoff S., ...More

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, vol.238, pp.272-275, 2005 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 238
  • Publication Date: 2005
  • Doi Number: 10.1016/j.nimb.2005.06.062
  • Title of Journal : NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
  • Page Numbers: pp.272-275

Abstract

Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of Ge quantum dots in Ge-implanted SiO2. Ge ion doses were up to 10(17)/cm(2), and subsequent annealing temperatures up to T-a = 1000 degrees C. Results suggest that ordered and correlated Ge QDs can be achieved by high-dose implantation followed by medium-T annealing. (c) 2005 Elsevier B.V. All rights reserved.