The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2


Desnica U., Dubcek P., Salamon K., Desnica-Frankovic I., Buljan M., Bernstoff S., et al.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, cilt.238, ss.272-275, 2005 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 238
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1016/j.nimb.2005.06.062
  • Dergi Adı: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
  • Sayfa Sayısı: ss.272-275

Özet

Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of Ge quantum dots in Ge-implanted SiO2. Ge ion doses were up to 10(17)/cm(2), and subsequent annealing temperatures up to T-a = 1000 degrees C. Results suggest that ordered and correlated Ge QDs can be achieved by high-dose implantation followed by medium-T annealing. (c) 2005 Elsevier B.V. All rights reserved.