Bandgap modulation of GaSe type semiconductors by coherently excited Raman active optical phonons | AVESİS

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Bandgap modulation of GaSe type semiconductors by coherently excited Raman active optical phonons

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ALLAKHVERDIEV K., ELLIALTIOGLU S.

14th International Conference on Raman Spectroscopy, HONG KONG, Hong Kong, 22 - 26 August 1994, pp.312-313

Publication Type: Conference Paper / Full Text
City: HONG KONG
Country: Hong Kong
Page Numbers: pp.312-313
Middle East Technical University Affiliated: Yes