Inter-pixel crosstalk improvement based on a thin crosstalk-block layer for mesa-based InGaAs photodetectors

ÇIRÇIR K., KOCAMAN S.

Quantum Sensing and Nano Electronics and Photonics XIX 2023, California, United States Of America, 29 January - 02 February 2023, vol.12430 identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 12430
  • Doi Number: 10.1117/12.2651070
  • City: California
  • Country: United States Of America
  • Keywords: crosstalk suppression, dark current reduction, in-device passivation, InGaAs/InP photodetectors, mesa type, Short wavelength infrared
  • Middle East Technical University Affiliated: Yes

Abstract

Mesa-based depleted passivation InGaAs photodetectors have a lower dark current than classical mesa type photodetectors due to in-device passivation. However, the in-device passivation layer's depleted state induces electrical crosstalk. High electric field distribution between the pixels originating from the depleted state is the main reason for increased electrical crosstalk. An additional thin crosstalk-block layer in the modified depleted passivation InGaAs photodetectors manipulates this electric field distribution between the pixels and improves inter-pixel crosstalk while dark current suppression is preserved.