A numerical design for SWIR/eSWIR dual-band operation with InGaAs nBn structures
Conference on Quantum Sensing and Nano Electronics and Photonics XVIII Part of SPIE Photonics West OPTO Conference, ELECTR NETWORK, 22 Ocak - 24 Şubat 2022, cilt.12009, (Tam Metin Bildiri)
- Yayın Türü: Bildiri / Tam Metin Bildiri
- Cilt numarası: 12009
- Doi Numarası: 10.1117/12.2610186
- Basıldığı Ülke: ELECTR NETWORK
- Anahtar Kelimeler: Infrared, Photodetector, nBn, InGaAs, SWIR, extended SWIR, SHORT-WAVE, RECOMBINATION, HGCDTE
- Orta Doğu Teknik Üniversitesi Adresli: Evet
Özet
In this paper, we present an nBn type dual-band InGaAs photodetector design with bias selectable cut-off wavelengths of 1.7 mu m and 2.5 mu m. InP based epilayer design consists of a compositionally graded quaternery InAlGaAs barrier region sandwiched between lattice matched InGaAs absorber and extended InGaAs absorber. In this study, we also provide a comparison between suggested nBn structure and a relatively usual npn InGaAs structure, using the same computational environment.