Analysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend

Yildiz D. E. , Gullu H. H. , Toppare L. , Cirpan A.

Journal of Materials Science: Materials in Electronics, vol.31, no.18, pp.15233-15242, 2020 (Journal Indexed in SCI Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 31 Issue: 18
  • Publication Date: 2020
  • Doi Number: 10.1007/s10854-020-04088-x
  • Title of Journal : Journal of Materials Science: Materials in Electronics
  • Page Numbers: pp.15233-15242


The forward and reversed biased current-voltage behaviors of the organic diode were detailed in a wide range of temperatures. In this diode, a donor-acceptor-conjugated copolymer system was constructed with poly((9,9-dioctylfluorene)-2,7-diyl-(2-dodecyl-benzo[1,2,3]triazole)) as a partner of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). Two-order of magnitude rectification ratio was achieved, and the temperature-dependent values of saturation current, zero-bias barrier height, and ideality factor were extracted according to the thermionic emission model. The temperature responses of these diode parameters showed an existence of inhomogeneity in the barrier height formation. As a result, the observed non-ideal behavior was explained by Gaussian distribution of barrier height where low-barrier regions are effective in the forward biased conduction mechanism at low temperatures. Together with this analysis, series resistances were evaluated using Cheung's functions and also density of interface states were investigated. On the other hand, reverse biased current flow was found under the dominant effect of Poole-Frenkel effects associated with these interfacial traps. The reverse current conduction mechanism was detailed by calculating characteristic field-lowering coefficients and barrier height values in the emission process from the trapped state in the range of temperatures of interest.