Production of High-Performance CdZnTe Crystals Grown by THM for Radiation Detection Applications

Ünal M., Balbaşi Ö. B., Karaman M. C., Genç A. M., Parlak M., Turan R.

Journal of Electronic Materials, cilt.51, sa.9, ss.4675-4680, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 51 Sayı: 9
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1007/s11664-022-09663-y
  • Dergi Adı: Journal of Electronic Materials
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Compendex, Computer & Applied Sciences, INSPEC
  • Sayfa Sayıları: ss.4675-4680
  • Anahtar Kelimeler: Crystal growth, CdZnTe crystals, THM growth, electrode deposition, gamma-ray detectors, TRAVELING HEATER METHOD, CDTE SINGLE-CRYSTALS, X-RAY, IMPROVEMENT, DEFECTS
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

© 2022, The Minerals, Metals & Materials Society.CdZnTe crystals are the perfect candidate to be used in room temperature x-ray and gamma-ray detection systems. Production of detector-grade crystals, on the other hand, is challenging due to the unique properties of the CdZnTe. CdZnTe crystals are soft-brittle materials and have high ionicity of bonds that makes the growth process challenging. Among several growth techniques, the travelling heater method (THM) is a preferred growth method to obtain high-quality crystals with high yield thanks to low segregation of Zn and usage of the seed crystal. In this paper, the production of high-quality CdZnTe crystals is presented. Growth, surface preparation, and contact deposition steps are summarized. CdZnTe crystals with resistivity around 6.1 × 109 Ω cm, mobility-lifetime product around 6.7 × 10−3 cm2/V, and leakage current as low as 2 nA at 200 V bias voltage are obtained, which is compatible with commercially available CdZnTe crystals.