Investigation of Turn-on and Turn-off Characteristics

Karakaya F., Ugur M., KEYSAN O.

20th European Conference on Power Electronics and Applications (EPE ECCE Europe), Riga, Latvia, 17 - 21 September 2018 identifier

  • Publication Type: Conference Paper / Full Text
  • City: Riga
  • Country: Latvia
  • Keywords: "Gallium Nitride (GaN)", "Wide bandgap devices", "Device characterisation ", "Device modeling", "Device simulation"


In this paper, turn-on and turn-off switching behavior of 650V enhancement-mode GaN power FETs are investigated. An analytical model is developed to analyze the current-voltage characteristics of the device during switching transients both with and without the effects of parasitic components. In addition, the effect of the temperature and circuit parameters on the switching characteristics are investigated.