Leakage current by Frenkel-Poole emission on benzotriazole and benzothiadiazole based organic devices


Yildiz D. E. , KARAKUS M., TOPPARE L. K. , ÇIRPAN A.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.28, pp.84-88, 2014 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 28
  • Publication Date: 2014
  • Doi Number: 10.1016/j.mssp.2014.06.038
  • Title of Journal : MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Page Numbers: pp.84-88
  • Keywords: Poole-Frenkel (PF) effect, Current conduction mechanisms, Leakage current, Organic devices, SERIES RESISTANCE, SCHOTTKY, MECHANISM, STATES, GAN

Abstract

In this study three different organic semiconductors were used in the fabrication of ITO/ PEDOT:PSS/Polymer:PCBM/LiF/Al configuration. Reverse current density-voltage (J(r)-V) measurements of the samples were investigated to define the reverse-bias leakage current mechanisms on benzotriazole and benzothiadiazole based organic devices. Our results indicate that the J(r)-V plot behaviors are given by linear dependence between In (J(r)) and V-1/(2), where J(r) is the reverse current density, and V is the applied voltage. This behavior is well known as the Poole-Frenkel (PF) effect where it is found to be dominating in the reverse-bias leakage current. (C) 2014 Elsevier Ltd. All rights reserved.