Leakage current by Frenkel-Poole emission on benzotriazole and benzothiadiazole based organic devices

Yildiz D. E., KARAKUS M., TOPPARE L. K., ÇIRPAN A.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.28, pp.84-88, 2014 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 28
  • Publication Date: 2014
  • Doi Number: 10.1016/j.mssp.2014.06.038
  • Journal Name: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.84-88
  • Keywords: Poole-Frenkel (PF) effect, Current conduction mechanisms, Leakage current, Organic devices, SERIES RESISTANCE, SCHOTTKY, MECHANISM, STATES, GAN
  • Middle East Technical University Affiliated: Yes

Abstract

In this study three different organic semiconductors were used in the fabrication of ITO/ PEDOT:PSS/Polymer:PCBM/LiF/Al configuration. Reverse current density-voltage (J(r)-V) measurements of the samples were investigated to define the reverse-bias leakage current mechanisms on benzotriazole and benzothiadiazole based organic devices. Our results indicate that the J(r)-V plot behaviors are given by linear dependence between In (J(r)) and V-1/(2), where J(r) is the reverse current density, and V is the applied voltage. This behavior is well known as the Poole-Frenkel (PF) effect where it is found to be dominating in the reverse-bias leakage current. (C) 2014 Elsevier Ltd. All rights reserved.