A new design and a fabrication approach to realize a high performance three axes capacitive MEMS accelerometer

Aydemir A., Terzioglu Y., AKIN T.

SENSORS AND ACTUATORS A-PHYSICAL, cilt.244, ss.324-333, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 244
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1016/j.sna.2016.04.007
  • Dergi Adı: SENSORS AND ACTUATORS A-PHYSICAL
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.324-333
  • Anahtar Kelimeler: Three-axis accelerometer, Out of plane accelerometer, Capacitive MEMS accelerometer, SOI, 3-AXIS ACCELEROMETER
  • Orta Doğu Teknik Üniversitesi Adresli: Evet

Özet

This paper presents a new fabrication approach and design for a three axis capacitive MEMS accelerometer that is capable of measuring externally applied accelerations in three orthogonal axes. Individual lateral and vertical axis accelerometers are fabricated in the same die on an SOI wafer which is anodically bonded to a glass substrate. Handle layer of the SOI wafer is used as the top electrode for the vertical axis accelerometer. This accelerometer has a 2 mm(2) perforated electrode area anchored to the glass substrate by four beams. The lateral axis accelerometers on the other hand, have comb finger structures with a 2.7 x 4.2 mm device size and anchored to the glass substrate by six folded beams. Rest capacitance of the vertical axis accelerometer is designed to be 8.8 pF, and it is 10.2 pF for the lateral axis accelerometers. The system level performance results are obtained using analog readout circuitry integrated to each axis separately. The x- and y-axis accelerometers show a noise floor and bias instability equal or better than 13.9 mu g/root Hz and 17 mu g, respectively, while the z-axis accelerometer shows 17.8 mu g/root Hz noise floor and 36 mu g bias instability values. (C) 2016 Elsevier B.V. All rights reserved.