Imer, B. Et Al. 2006. Improved quality (11(2)over-bar-0) a-plane GaN with sidewall lateral epitaxial overgrowth. APPLIED PHYSICS LETTERS , vol.88, no.6 .

Imer, B., Wu, F., DenBaars, S., & Speck, J., (2006). Improved quality (11(2)over-bar-0) a-plane GaN with sidewall lateral epitaxial overgrowth. APPLIED PHYSICS LETTERS , vol.88, no.6.

Imer, MUHSİNE Et Al. "Improved quality (11(2)over-bar-0) a-plane GaN with sidewall lateral epitaxial overgrowth," APPLIED PHYSICS LETTERS , vol.88, no.6, 2006

Imer, MUHSİNE B. Et Al. "Improved quality (11(2)over-bar-0) a-plane GaN with sidewall lateral epitaxial overgrowth." APPLIED PHYSICS LETTERS , vol.88, no.6, 2006

Imer, B. Et Al. (2006) . "Improved quality (11(2)over-bar-0) a-plane GaN with sidewall lateral epitaxial overgrowth." APPLIED PHYSICS LETTERS , vol.88, no.6.

@article{article, author={MUHSİNE BİLGE İMER Et Al. }, title={Improved quality (11(2)over-bar-0) a-plane GaN with sidewall lateral epitaxial overgrowth}, journal={APPLIED PHYSICS LETTERS}, year=2006}