Besıkcı, C. Et Al. 1994. DETAILED ANALYSIS OF CARRIER TRANSPORT IN INAS0.3SB0.7 LAYERS GROWN ON GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION. JOURNAL OF APPLIED PHYSICS , vol.76 , 5820-5828.

Besıkcı, C., Choı, Y., Labeyrıe, G., Bıgan, E., Razeghı, M., Cohen, J., ... Carsello, J.(1994). DETAILED ANALYSIS OF CARRIER TRANSPORT IN INAS0.3SB0.7 LAYERS GROWN ON GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION. JOURNAL OF APPLIED PHYSICS , vol.76, 5820-5828.

Besıkcı, CENGİZ Et Al. "DETAILED ANALYSIS OF CARRIER TRANSPORT IN INAS0.3SB0.7 LAYERS GROWN ON GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION," JOURNAL OF APPLIED PHYSICS , vol.76, 5820-5828, 1994

Besıkcı, CENGİZ Et Al. "DETAILED ANALYSIS OF CARRIER TRANSPORT IN INAS0.3SB0.7 LAYERS GROWN ON GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION." JOURNAL OF APPLIED PHYSICS , vol.76, pp.5820-5828, 1994

Besıkcı, C. Et Al. (1994) . "DETAILED ANALYSIS OF CARRIER TRANSPORT IN INAS0.3SB0.7 LAYERS GROWN ON GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION." JOURNAL OF APPLIED PHYSICS , vol.76, pp.5820-5828.

@article{article, author={CENGİZ BEŞİKCİ Et Al. }, title={DETAILED ANALYSIS OF CARRIER TRANSPORT IN INAS0.3SB0.7 LAYERS GROWN ON GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION}, journal={JOURNAL OF APPLIED PHYSICS}, year=1994, pages={5820-5828} }