Ozdemir, S. Et Al. 2003. Trap levels in layered semiconductor TlInS1.9Se0.1. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH , vol.196, no.2 , 422-428.

Ozdemir, S., Gasanly, N., & Bucurgat, M., (2003). Trap levels in layered semiconductor TlInS1.9Se0.1. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH , vol.196, no.2, 422-428.

Ozdemir, S, NIZAMI HASANLI, And M Bucurgat. "Trap levels in layered semiconductor TlInS1.9Se0.1," PHYSICA STATUS SOLIDI A-APPLIED RESEARCH , vol.196, no.2, 422-428, 2003

Ozdemir, S Et Al. "Trap levels in layered semiconductor TlInS1.9Se0.1." PHYSICA STATUS SOLIDI A-APPLIED RESEARCH , vol.196, no.2, pp.422-428, 2003

Ozdemir, S. Gasanly, N. And Bucurgat, M. (2003) . "Trap levels in layered semiconductor TlInS1.9Se0.1." PHYSICA STATUS SOLIDI A-APPLIED RESEARCH , vol.196, no.2, pp.422-428.

@article{article, author={S Ozdemir Et Al. }, title={Trap levels in layered semiconductor TlInS1.9Se0.1}, journal={PHYSICA STATUS SOLIDI A-APPLIED RESEARCH}, year=2003, pages={422-428} }