A. Jacob Et Al. , "Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.6, pp.37-41, 2003
Jacob, A. Et Al. 2003. Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.6 , 37-41.
Jacob, A., Myrberg, T., Friesel, M., Nur, O., Willander, M., Serincan, U., ... Turan, R.(2003). Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.6, 37-41.
Jacob, AP Et Al. "Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.6, 37-41, 2003
Jacob, AP Et Al. "Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.6, pp.37-41, 2003
Jacob, A. Et Al. (2003) . "Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.6, pp.37-41.
@article{article, author={AP Jacob Et Al. }, title={Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2003, pages={37-41} }