Besikci, C. And Razeghi, M. 1994. Electron Transport Properties of Ga0.51In0.49P for Device Applications. IEEE Transactions on Electron Devices , vol.41, no.6 , 1066-1069.

Besikci, C., & Razeghi, M., (1994). Electron Transport Properties of Ga0.51In0.49P for Device Applications. IEEE Transactions on Electron Devices , vol.41, no.6, 1066-1069.

Besikci, CENGİZ, And M. Razeghi. "Electron Transport Properties of Ga0.51In0.49P for Device Applications," IEEE Transactions on Electron Devices , vol.41, no.6, 1066-1069, 1994

Besikci, CENGİZ And Razeghi, M.. "Electron Transport Properties of Ga0.51In0.49P for Device Applications." IEEE Transactions on Electron Devices , vol.41, no.6, pp.1066-1069, 1994

Besikci, C. And Razeghi, M. (1994) . "Electron Transport Properties of Ga0.51In0.49P for Device Applications." IEEE Transactions on Electron Devices , vol.41, no.6, pp.1066-1069.

@article{article, author={CENGİZ BEŞİKCİ And author={M. Razeghi}, title={Electron Transport Properties of Ga0.51In0.49P for Device Applications}, journal={IEEE Transactions on Electron Devices}, year=1994, pages={1066-1069} }