Besikci, C. Et Al. 1997. Gas source molecular beam epitaxy growth and characterization of Ga0.51In0.49P/InxGa1-xAs/GaAs modulation-doped field-effect transistor structures. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.12, no.11 , 1472-1478.

Besikci, C., Civan, Y., Ozder, S., Sen, O., Jelen, C., Slivken, S., ... Razeghi, M.(1997). Gas source molecular beam epitaxy growth and characterization of Ga0.51In0.49P/InxGa1-xAs/GaAs modulation-doped field-effect transistor structures. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.12, no.11, 1472-1478.

Besikci, CENGİZ Et Al. "Gas source molecular beam epitaxy growth and characterization of Ga0.51In0.49P/InxGa1-xAs/GaAs modulation-doped field-effect transistor structures," SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.12, no.11, 1472-1478, 1997

Besikci, CENGİZ Et Al. "Gas source molecular beam epitaxy growth and characterization of Ga0.51In0.49P/InxGa1-xAs/GaAs modulation-doped field-effect transistor structures." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.12, no.11, pp.1472-1478, 1997

Besikci, C. Et Al. (1997) . "Gas source molecular beam epitaxy growth and characterization of Ga0.51In0.49P/InxGa1-xAs/GaAs modulation-doped field-effect transistor structures." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.12, no.11, pp.1472-1478.

@article{article, author={CENGİZ BEŞİKCİ Et Al. }, title={Gas source molecular beam epitaxy growth and characterization of Ga0.51In0.49P/InxGa1-xAs/GaAs modulation-doped field-effect transistor structures}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, year=1997, pages={1472-1478} }