O. ÖZDEMİR Et Al. , "Similar admittance behavior of amorphous silicon carbide and nitride dielectrics within the MIS structure," VACUUM , vol.82, no.6, pp.566-573, 2008
ÖZDEMİR, O. Et Al. 2008. Similar admittance behavior of amorphous silicon carbide and nitride dielectrics within the MIS structure. VACUUM , vol.82, no.6 , 566-573.
ÖZDEMİR, O., Atilgan, I., & Katircioglu, B., (2008). Similar admittance behavior of amorphous silicon carbide and nitride dielectrics within the MIS structure. VACUUM , vol.82, no.6, 566-573.
ÖZDEMİR, Orhan, Ismail Atilgan, And Bayram Katircioglu. "Similar admittance behavior of amorphous silicon carbide and nitride dielectrics within the MIS structure," VACUUM , vol.82, no.6, 566-573, 2008
ÖZDEMİR, Orhan Et Al. "Similar admittance behavior of amorphous silicon carbide and nitride dielectrics within the MIS structure." VACUUM , vol.82, no.6, pp.566-573, 2008
ÖZDEMİR, O. Atilgan, I. And Katircioglu, B. (2008) . "Similar admittance behavior of amorphous silicon carbide and nitride dielectrics within the MIS structure." VACUUM , vol.82, no.6, pp.566-573.
@article{article, author={Orhan ÖZDEMİR Et Al. }, title={Similar admittance behavior of amorphous silicon carbide and nitride dielectrics within the MIS structure}, journal={VACUUM}, year=2008, pages={566-573} }