RAFATOV, İ. And YEŞİL, C. 2018. Transition from homogeneous stationary to oscillating state in planar gas discharge-semiconductor system in nitrogen: Effect of fluid modelling approach. PHYSICS OF PLASMAS , vol.25, no.8 .

RAFATOV, İ., & YEŞİL, C., (2018). Transition from homogeneous stationary to oscillating state in planar gas discharge-semiconductor system in nitrogen: Effect of fluid modelling approach. PHYSICS OF PLASMAS , vol.25, no.8.

RAFATOV, İSMAİL, And CİHAN YEŞİL. "Transition from homogeneous stationary to oscillating state in planar gas discharge-semiconductor system in nitrogen: Effect of fluid modelling approach," PHYSICS OF PLASMAS , vol.25, no.8, 2018

RAFATOV, İSMAİL And YEŞİL, CİHAN. "Transition from homogeneous stationary to oscillating state in planar gas discharge-semiconductor system in nitrogen: Effect of fluid modelling approach." PHYSICS OF PLASMAS , vol.25, no.8, 2018

RAFATOV, İ. And YEŞİL, C. (2018) . "Transition from homogeneous stationary to oscillating state in planar gas discharge-semiconductor system in nitrogen: Effect of fluid modelling approach." PHYSICS OF PLASMAS , vol.25, no.8.

@article{article, author={İSMAİL RAFATOV And author={CİHAN YEŞİL}, title={Transition from homogeneous stationary to oscillating state in planar gas discharge-semiconductor system in nitrogen: Effect of fluid modelling approach}, journal={PHYSICS OF PLASMAS}, year=2018}