O. R. Oezdemir Et Al. , "Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement," SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.23, no.2, 2008
Oezdemir, O. R. Et Al. 2008. Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.23, no.2 .
Oezdemir, O. R., Anutgan, M., Aliyeva-Anutgan, T., Atilgan, I., & Katircioglu, B., (2008). Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.23, no.2.
Oezdemir, Orhan Et Al. "Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement," SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.23, no.2, 2008
Oezdemir, Orhan R. Et Al. "Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.23, no.2, 2008
Oezdemir, O. R. Et Al. (2008) . "Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.23, no.2.
@article{article, author={Orhan R. Oezdemir Et Al. }, title={Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, year=2008}