Kulakci, M. And TURAN, R. 2013. Improvement of light emission from Tb-doped Si-based MOS-LED using excess Si in the oxide layer. JOURNAL OF LUMINESCENCE , vol.137 , 37-42.

Kulakci, M., & TURAN, R., (2013). Improvement of light emission from Tb-doped Si-based MOS-LED using excess Si in the oxide layer. JOURNAL OF LUMINESCENCE , vol.137, 37-42.

Kulakci, Mustafa, And RAŞİT TURAN. "Improvement of light emission from Tb-doped Si-based MOS-LED using excess Si in the oxide layer," JOURNAL OF LUMINESCENCE , vol.137, 37-42, 2013

Kulakci, Mustafa And TURAN, RAŞİT. "Improvement of light emission from Tb-doped Si-based MOS-LED using excess Si in the oxide layer." JOURNAL OF LUMINESCENCE , vol.137, pp.37-42, 2013

Kulakci, M. And TURAN, R. (2013) . "Improvement of light emission from Tb-doped Si-based MOS-LED using excess Si in the oxide layer." JOURNAL OF LUMINESCENCE , vol.137, pp.37-42.

@article{article, author={Mustafa Kulakci And author={RAŞİT TURAN}, title={Improvement of light emission from Tb-doped Si-based MOS-LED using excess Si in the oxide layer}, journal={JOURNAL OF LUMINESCENCE}, year=2013, pages={37-42} }