S. Yerci Et Al. , "Visible and 1.54 mu m Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering," IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS , vol.16, no.1, pp.114-123, 2010
Yerci, S. Et Al. 2010. Visible and 1.54 mu m Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS , vol.16, no.1 , 114-123.
Yerci, S., Li, R., Kucheyev, S. O., VAN BUUREN, T., Basu, S. N., & Dal Negro, L., (2010). Visible and 1.54 mu m Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS , vol.16, no.1, 114-123.
Yerci, SELÇUK Et Al. "Visible and 1.54 mu m Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering," IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS , vol.16, no.1, 114-123, 2010
Yerci, SELÇUK Et Al. "Visible and 1.54 mu m Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering." IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS , vol.16, no.1, pp.114-123, 2010
Yerci, S. Et Al. (2010) . "Visible and 1.54 mu m Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering." IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS , vol.16, no.1, pp.114-123.
@article{article, author={SELÇUK YERCİ Et Al. }, title={Visible and 1.54 mu m Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering}, journal={IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS}, year=2010, pages={114-123} }