Goksen, K. Et Al. 2006. Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , vol.127, no.1 , 41-46.

Goksen, K., Gasanly, N., Seyhan, A., & Turan, R., (2006). Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , vol.127, no.1, 41-46.

Goksen, K Et Al. "Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals," MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , vol.127, no.1, 41-46, 2006

Goksen, K Et Al. "Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals." MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , vol.127, no.1, pp.41-46, 2006

Goksen, K. Et Al. (2006) . "Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals." MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , vol.127, no.1, pp.41-46.

@article{article, author={K Goksen Et Al. }, title={Temperature- and excitation intensity-dependent photoluminescence in Ga4Se3S layered crystals}, journal={MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY}, year=2006, pages={41-46} }