Altan, H. Et Al. 2007. Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.22, no.5 , 457-463.

Altan, H., Sengupta, A., Pham, D., Grebel, H., & Federici, J. F., (2007). Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.22, no.5, 457-463.

Altan, HAKAN Et Al. "Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy," SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.22, no.5, 457-463, 2007

Altan, HAKAN Et Al. "Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.22, no.5, pp.457-463, 2007

Altan, H. Et Al. (2007) . "Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.22, no.5, pp.457-463.

@article{article, author={HAKAN ALTAN Et Al. }, title={Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, year=2007, pages={457-463} }