SERİNCAN, U. Et Al. 2005. Evolution of SiO2 matrix during the formal-ion of Ge and Si nanocrystals by ion implantation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , vol.239, no.4 , 419-425.

SERİNCAN, U., Yerci, S., KULAKCI, M., & Turan, R., (2005). Evolution of SiO2 matrix during the formal-ion of Ge and Si nanocrystals by ion implantation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , vol.239, no.4, 419-425.

SERİNCAN, UĞUR Et Al. "Evolution of SiO2 matrix during the formal-ion of Ge and Si nanocrystals by ion implantation," NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , vol.239, no.4, 419-425, 2005

SERİNCAN, UĞUR Et Al. "Evolution of SiO2 matrix during the formal-ion of Ge and Si nanocrystals by ion implantation." NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , vol.239, no.4, pp.419-425, 2005

SERİNCAN, U. Et Al. (2005) . "Evolution of SiO2 matrix during the formal-ion of Ge and Si nanocrystals by ion implantation." NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , vol.239, no.4, pp.419-425.

@article{article, author={UĞUR SERİNCAN Et Al. }, title={Evolution of SiO2 matrix during the formal-ion of Ge and Si nanocrystals by ion implantation}, journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS}, year=2005, pages={419-425} }