Coskun, E. Et Al. 2015. Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.34 , 138-145.

Coskun, E., Gullu, H. H., CANDAN, İ., Bayrakli, O., PARLAK, M., & Ercelebi, C., (2015). Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.34, 138-145.

Coskun, EMRE Et Al. "Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.34, 138-145, 2015

Coskun, EMRE Et Al. "Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.34, pp.138-145, 2015

Coskun, E. Et Al. (2015) . "Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.34, pp.138-145.

@article{article, author={EMRE Coskun Et Al. }, title={Device behavior of an In/p-Ag(Ga,In)Te-2/n-Si/Ag heterojunction diode}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2015, pages={138-145} }