Ouacha, H. Et Al. 2001. Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGe Schottky contacts prepared by co-sputtering and thermal reaction. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.16, no.4 , 255-259.

Ouacha, H., Nur, O., Fu, Y., Willander, M., Ouacha, A., & Turan, R., (2001). Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGe Schottky contacts prepared by co-sputtering and thermal reaction. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.16, no.4, 255-259.

Ouacha, H Et Al. "Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGe Schottky contacts prepared by co-sputtering and thermal reaction," SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.16, no.4, 255-259, 2001

Ouacha, H Et Al. "Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGe Schottky contacts prepared by co-sputtering and thermal reaction." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.16, no.4, pp.255-259, 2001

Ouacha, H. Et Al. (2001) . "Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGe Schottky contacts prepared by co-sputtering and thermal reaction." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.16, no.4, pp.255-259.

@article{article, author={H Ouacha Et Al. }, title={Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGe Schottky contacts prepared by co-sputtering and thermal reaction}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, year=2001, pages={255-259} }