Serincan, U. Et Al. 2004. Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.19, no.2 , 247-251.

Serincan, U., Kartopu, G., Guennes, A., Finstad, T., Turan, R., Ekinci, Y., ... Bayliss, S.(2004). Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.19, no.2, 247-251.

Serincan, U Et Al. "Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy," SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.19, no.2, 247-251, 2004

Serincan, U Et Al. "Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.19, no.2, pp.247-251, 2004

Serincan, U. Et Al. (2004) . "Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.19, no.2, pp.247-251.

@article{article, author={U Serincan Et Al. }, title={Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, year=2004, pages={247-251} }